• DocumentCode
    3336961
  • Title

    Transport properties of PbI2-doped PbTe

  • Author

    Gelbstein, Y. ; Dashevsky, Z. ; Dariel, M.P.

  • Author_Institution
    Dept. of Mater. Eng., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
  • fYear
    2002
  • fDate
    25-29 Aug. 2002
  • Firstpage
    5
  • Lastpage
    8
  • Abstract
    The transport properties of homogeneous, cold compacted and sintered PbI2-doped PbTe samples were measured and compared to those of cast and single-crystal samples with similar dopant concentrations, as reported in the literature. Such a comparison between sintered, cast and single-crystal materials is mandatory in order to determine the potential of graded sintered samples for thermoelectric applications. The Seebeck coefficient and the electrical resistivity were measured in the temperature range of 300-800 K, while the Hall coefficient and the electron mobility were measured in the temperature range of 80-300 K. The power-factor values of the prepared samples were found to be comparable to those of cast and single-crystal materials up to 800 K.
  • Keywords
    Hall effect; IV-VI semiconductors; Seebeck effect; electrical resistivity; electron mobility; lead compounds; thermoelectric power; 300 to 800 K; Hall coefficient; PbI2-doped PbTe; PbTe:PbI2; Seebeck coefficient; electrical resistivity; electron mobility; graded sintered samples; potential; power-factor values; sintered samples; thermoelectric applications; transport properties; Argon; Atmosphere; Electric resistance; Electric variables measurement; Electromagnetic measurements; Electron mobility; Powders; Temperature distribution; Temperature measurement; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2002. Proceedings ICT '02. Twenty-First International Conference on
  • Print_ISBN
    0-7803-7683-8
  • Type

    conf

  • DOI
    10.1109/ICT.2002.1190252
  • Filename
    1190252