DocumentCode
3339292
Title
logical effort model extension with temperature and voltage variations
Author
Wu, Chun-Hui ; Lin, Shun-Hua ; Chiueh, Herming
Author_Institution
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu
fYear
2008
fDate
24-26 Sept. 2008
Firstpage
85
Lastpage
88
Abstract
The method of ldquoLogical Effort Delay Modelrdquo allows designers to quickly estimate delay time and optimize logic paths. But the previous variances of logical effort models do not mention how to handle process, voltage, and temperature (PVT) variations appropriately, which may induce a serious misestimate. According to simulation results, delay time increases 21% while temperature increasing from 0degC to 125degC, and increases 2X while supply voltage decreasing from 1 V to 0.5 V in 90nm process. Thus a simple linear extended logical effort g, 1/g=(mtt+bt)VDD+C, supporting for temperature t and supply voltage VDD variations is presented. The proposed model enables designers to estimate the logic path delay and to optimize an N-stage logic network under different temperature and supply voltage conditions. After validation, the accuracy of this new extended logical effort model can achieve about 90%.
Keywords
CMOS logic circuits; delays; integrated circuit design; logic design; logic gates; N-stage logic network; delay time estimation; integrated circuits design; linear extended logical effort; logical effort model extension; single CMOS logic gate; temperature 0 degC to 125 degC; temperature variation; voltage 1 V to 0.5 V; voltage variation; CMOS logic circuits; Delay effects; Delay estimation; Design optimization; Logic design; Logic gates; Parasitic capacitance; Semiconductor device modeling; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal Inveatigation of ICs and Systems, 2008. THERMINIC 2008. 14th International Workshop on
Conference_Location
Rome
Print_ISBN
978-1-4244-3365-0
Electronic_ISBN
978-2-35500-008-9
Type
conf
DOI
10.1109/THERMINIC.2008.4669884
Filename
4669884
Link To Document