DocumentCode
3340029
Title
Modeling of switched current memory cell with VHDL-AMS for mixed system design
Author
Ksentini, N. ; Loulou, M. ; Fakhfakh, A. ; Nehme, A. ; Masmoudi, N. ; Charlot, J.-J.
Author_Institution
Lab. d´´Electronique et des Technol. de l´´Inf., Ecole Nationale d´´Ingenieurs Sfax Tunisia, Tunisia
fYear
2003
fDate
23-25 Feb. 2003
Firstpage
162
Lastpage
165
Abstract
In this paper, we present a method for modeling a second generation class-A SI memory cells using VHDL-AMS. The developed behavioral model is based on simplified physical models of phenomenon occurring during the operating phases of the SI cell. It is designed to be simulated in the time domain and it is used to develop behavioral models of an SI integrator and sigma-delta modulator.
Keywords
analogue storage; circuit analysis computing; mixed analogue-digital integrated circuits; switched current circuits; transfer functions; transient response; SI integrator; SI memory cell modeling; VHDL-AMS; behavioral model; mixed system design; second generation class-A SI memory cells; sigma-delta modulator; switched current memory cell; time domain simulation; Analog integrated circuits; Circuit simulation; Clocks; Delta-sigma modulation; Frequency; MOSFETs; Runtime; Signal processing; Switching circuits; Transient response;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed-Signal Design, 2003. Southwest Symposium on
Print_ISBN
0-7803-7778-8
Type
conf
DOI
10.1109/SSMSD.2003.1190417
Filename
1190417
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