• DocumentCode
    3341619
  • Title

    Surface texturing for silicon solar cells using reactive ion etching technique

  • Author

    Kumaravelu, G. ; Alkaisi, M.M. ; Bittar, A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Canterbury Univ., Christchurch, New Zealand
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    258
  • Lastpage
    261
  • Abstract
    Surface texturing is an effective and more lasting technique in reducing reflections and improving light trapping compared to antireflection coatings. A surface texturing technique using reactive ion etching (RIE) method suitable for crystalline and multi crystalline solar cells, which resulted in surfaces with negligible reflection in the visible band is described. Different texturing structures (pillars, holes and black silicon) have been studied and compared in the wavelength range from 250nm-2500nm. It is found that the reflectance of the textured column structures were less than 0.4% at wavelengths from 500 nm to 1000 nm and showed a minimum of 0.29% at 1000 nm while the reflectivity from black silicon is around 1% and hole structures is around 6.8% in the same wavelength range.
  • Keywords
    elemental semiconductors; reflectivity; silicon; solar cells; sputter etching; surface texture; 250 to 2500 nm; RIE; Si; reactive ion etching; reflectance; reflectivity; silicon solar cells; surface texturing; texturing structure; Coatings; Crystallization; Etching; Optical reflection; Photovoltaic cells; Plasma applications; Plasma chemistry; Reflectivity; Silicon; Surface texture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190507
  • Filename
    1190507