DocumentCode
3341619
Title
Surface texturing for silicon solar cells using reactive ion etching technique
Author
Kumaravelu, G. ; Alkaisi, M.M. ; Bittar, A.
Author_Institution
Dept. of Electr. & Comput. Eng., Canterbury Univ., Christchurch, New Zealand
fYear
2002
fDate
19-24 May 2002
Firstpage
258
Lastpage
261
Abstract
Surface texturing is an effective and more lasting technique in reducing reflections and improving light trapping compared to antireflection coatings. A surface texturing technique using reactive ion etching (RIE) method suitable for crystalline and multi crystalline solar cells, which resulted in surfaces with negligible reflection in the visible band is described. Different texturing structures (pillars, holes and black silicon) have been studied and compared in the wavelength range from 250nm-2500nm. It is found that the reflectance of the textured column structures were less than 0.4% at wavelengths from 500 nm to 1000 nm and showed a minimum of 0.29% at 1000 nm while the reflectivity from black silicon is around 1% and hole structures is around 6.8% in the same wavelength range.
Keywords
elemental semiconductors; reflectivity; silicon; solar cells; sputter etching; surface texture; 250 to 2500 nm; RIE; Si; reactive ion etching; reflectance; reflectivity; silicon solar cells; surface texturing; texturing structure; Coatings; Crystallization; Etching; Optical reflection; Photovoltaic cells; Plasma applications; Plasma chemistry; Reflectivity; Silicon; Surface texture;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190507
Filename
1190507
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