DocumentCode
3342779
Title
Seventh International Conference on Indium Phosphide and Related Materials
fYear
1995
fDate
9-13 May 1995
Abstract
The following topics were dealt with: lasers; bulk crystal growth; epitaxial growth; HFETs; selective growth; photodetectors; MEMTs; HBTs; optical modulators; processing technology; photonic integration; MBE growth; MOVPE growth; reliability and passivation techniques; nanostructure devices
Keywords
III-V semiconductors; crystal growth; electro-optical modulation; field effect transistors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; nanotechnology; photodetectors; semiconductor growth; semiconductor lasers; semiconductor technology; vapour phase epitaxial growth; HBTs; HFETs; InP; MBE growth; MEMTs; MOVPE growth; bulk crystal growth; epitaxial growth; lasers; nanostructure devices; optical modulators; passivation techniques; photodetectors; photonic integration; processing technology; reliability; selective growth;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido, Japan
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.523777
Filename
523777
Link To Document