DocumentCode
3343444
Title
Controlled drift of indirect excitons in GaAs coupled quantum wells
Author
Snoke, David ; Negoita, V. ; Eberl, K.
Author_Institution
Dept. of Phys. & Astron., Pittsburgh Univ., PA, USA
fYear
1992
fDate
23-28 May 1992
Firstpage
11
Lastpage
12
Abstract
Summary form only given. Because excitons are charge neutral electron-hole pairs, they do not normally move in response to an electric field, and therefore it is difficult to control their motion. We report here the successful demonstration of two methods of exerting a force on excitons in GaAs coupled quantum wells. Both of these methods have been used to confine excitons to a spatial trap which is well approximated by harmonic potential in the plane of the wells.
Keywords
excitons; gallium arsenide; light coherence; semiconductor quantum wells; GaAs; GaAs coupled quantum wells; charge neutral electron-hole pairs; controlled drift; electric field; exciton confinement; harmonic potential; indirect excitons; motion control; spatial trap; Absorption; Delay; Energy measurement; Excitons; Gallium arsenide; Interference; NIST; Optical sensors; Probes; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807094
Filename
807094
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