Treatment effects on deep levels in CdTe based solar cells

Author

Gilmore, A.S. ; Kaydanov, V. ; Ohno, T.R. ; Rose, D. ; Feldman, S.D. ; Erslev, P.

Author_Institution

Colorado Sch. of Mines, Golden, CO, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

604

Lastpage

607

Abstract

This paper presents capacitance-voltage, admittance spectroscopy, and drive-level capacitance profiling (DLCP) data on CdTe solar cells prepared with and without standard treatments (CdCl₂ treatment and/or BrMeOH etch). The DLCP technique confirmed previous results and added the ability to measure deep trapping state spatial distributions. The concentrations and depth profiles of the deep states observed depended upon the treatments used. High concentrations (>1×10¹⁵ cm^-3) of trapping states with a variety of characteristic frequencies exist in all cells studied. The sample with neither standard treatment had the lowest concentration of deep trapping states.

Keywords

II-VI semiconductors; cadmium compounds; capacitance; deep levels; semiconductor device measurement; solar cells; BrMeOH etch; CdCl₂; CdCl₂ treatment; CdTe; CdTe based solar cells; DLCP; admittance spectroscopy; capacitance-voltage; deep levels; deep states; deep trapping state spatial distributions; drive-level capacitance profiling; treatment effects; Admittance measurement; Annealing; Capacitance; Capacitance-voltage characteristics; Doping; Etching; Frequency; Methanol; Photovoltaic cells; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190637

Filename

1190637