Study of a new indium sulphide derivative for buffer layer application

Author

Barreau, N. ; Marsillac, S. ; Bernede, J.C. ; Deudon, C. ; Brohan, L. ; Shafarman, W.N. ; Barreau, A.

Author_Institution

LPSE-FSTN, Nantes, France

fYear

2002

fDate

19-24 May 2002

Firstpage

628

Lastpage

631

Abstract

Thin films of β-In₂NaS₃ (BINS) have been synthesized by physical vapour deposition (PVD). The determination of their properties has shown that the films have an n-type electrical conductivity around 10^-6 S.cm^-1 and their optical band gap increases from 2.10 eV to 2.95 eV. These properties make the wide band gap BINS thin films potential candidates to substitute CBD-CdS in thin films CIGS-based solar cells. The first CIGS/BINS cell has reached efficiency higher than 8%, with a V_oc of 660 mV.

Keywords

electrical conductivity; energy gap; indium compounds; optical constants; semiconductor thin films; sodium compounds; solar cells; vapour deposited coatings; wide band gap semiconductors; β-In₂NaS₃; 660 mV; 8 percent; CIGS/BINS cell; Cu(InGa)(SSe)₂; In₂NaS₃; PVD; buffer layer application; n-type electrical conductivity; optical band gap; physical vapour deposition; solar cells; wide band gap BINS thin films; Atherosclerosis; Buffer layers; Chemical vapor deposition; Conductive films; Conductivity; Indium; Optical buffering; Optical films; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190643

Filename

1190643