DocumentCode
3343750
Title
Preparation and characterization of CuAlSe2 thin films prepared by co-evaporation
Author
Reddy, Y.B.K. ; Raja, V. Sundara
Author_Institution
Solar Energy Lab., Sri Venkateswara Univ., Tirupati, India
fYear
2002
fDate
19-24 May 2002
Firstpage
664
Lastpage
667
Abstract
CuAlSe2 thin films were deposited using three-source co-evaporation technique. The spectral transmittance data in the wavelength range 350-900 nm revealed three characteristic band gaps 2.62 eV, 2.73 eV and 2.91 eV. The first one is attributed to fundamental optical absorption process. Additional band gaps are attributed to the transitions occurring from the energy levels arising out of crystal field and spin-orbit interactions. Powder X-ray diffraction pattern revealed the films to be chalcopyrite in structure. The lattice parameters determined from XRD data were found to be a=0.562 nm and c=1.099 nm. The spin orbit (ΔSO) and crystal field (ΔCF) parameters are found to be 0.19 and -0.12 respectively. The resistivity of the films at room temperature was found to be 300 Ωcm.
Keywords
X-ray diffraction; aluminium compounds; copper compounds; crystal field interactions; electrical resistivity; energy gap; lattice constants; optical constants; semiconductor thin films; spin-orbit interactions; ternary semiconductors; vacuum deposited coatings; 300 K; 300 ohmcm; 350 to 900 nm; CuAlSe2; CuAlSe2 thin films; X-ray diffraction; XRD; band gaps; characterization; co-evaporation; crystal field interactions; lattice parameters; resistivity; spectral transmittance; spin-orbit interactions; Electromagnetic wave absorption; Energy states; Lattices; Optical diffraction; Optical films; Photonic band gap; Powders; Sputtering; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190652
Filename
1190652
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