• DocumentCode
    3343906
  • Title

    Improving thin film solar cells with atomic layer deposited ZnO: Highly tunable buffer, intrinsic, and top contact layers in a single fabrication process

  • Author

    Thomas, Manoj A. ; Jingbiao Cui

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Arkansas at Little Rock, Little Rock, AR, USA
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1187
  • Lastpage
    1191
  • Abstract
    A variety of highly tunable ZnO films have been deposited by atomic layer deposition. The optical and electrical properties of the ZnO films are well controlled by either doping with Mg or utilizing in-situ oxygen or hydrogen plasma treatments during deposition. The wide range of physical properties of these ZnO films enables their use as buffer, intrinsic, and top contact layers in thin film solar cells. The single fabrication process maintains high quality interfaces between each layer in the solar cell, and the precise control of the ZnO films´ properties allows for true device optimization.
  • Keywords
    II-VI semiconductors; atomic layer deposition; buffer layers; doping; plasma materials processing; semiconductor thin films; solar cells; zinc compounds; ZnO; atomic layer deposition; buffer layers; contact layers; doping; electrical properties; highly tunable ZnO films; hydrogen plasma treatments; in-situ oxygen plasma treatments; instrinsic layers; optical properties; single fabrication process; thin film solar cells; true device optimization; Buffer layers; Conductivity; Hydrogen; Photovoltaic cells; Plasmas; Zinc oxide; doping; plasma materials processing; semiconductor films; solar energy; zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744352
  • Filename
    6744352