DocumentCode
3343906
Title
Improving thin film solar cells with atomic layer deposited ZnO: Highly tunable buffer, intrinsic, and top contact layers in a single fabrication process
Author
Thomas, Manoj A. ; Jingbiao Cui
Author_Institution
Dept. of Phys. & Astron., Univ. of Arkansas at Little Rock, Little Rock, AR, USA
fYear
2013
fDate
16-21 June 2013
Firstpage
1187
Lastpage
1191
Abstract
A variety of highly tunable ZnO films have been deposited by atomic layer deposition. The optical and electrical properties of the ZnO films are well controlled by either doping with Mg or utilizing in-situ oxygen or hydrogen plasma treatments during deposition. The wide range of physical properties of these ZnO films enables their use as buffer, intrinsic, and top contact layers in thin film solar cells. The single fabrication process maintains high quality interfaces between each layer in the solar cell, and the precise control of the ZnO films´ properties allows for true device optimization.
Keywords
II-VI semiconductors; atomic layer deposition; buffer layers; doping; plasma materials processing; semiconductor thin films; solar cells; zinc compounds; ZnO; atomic layer deposition; buffer layers; contact layers; doping; electrical properties; highly tunable ZnO films; hydrogen plasma treatments; in-situ oxygen plasma treatments; instrinsic layers; optical properties; single fabrication process; thin film solar cells; true device optimization; Buffer layers; Conductivity; Hydrogen; Photovoltaic cells; Plasmas; Zinc oxide; doping; plasma materials processing; semiconductor films; solar energy; zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744352
Filename
6744352
Link To Document