• DocumentCode
    3344651
  • Title

    Elaboration of thermal wet oxidation of AlAs/GaAs distributed bragg reflectors

  • Author

    Pucicki, D. ; Korbutowicz, R. ; Kania, A. ; Adamiak, B.

  • fYear
    2004
  • fDate
    17-21 Oct. 2004
  • Firstpage
    179
  • Lastpage
    181
  • Abstract
    The incorporation of oxidized DBR or single AIAs layers into optoelectronics devices with vertical resonant cavity give intense profit due to large difference of refractive index between GaAs and oxidized AIAs layers. bifluence of the thermal wet oxidation process parameters on AIAs/GaAs Distributed Bragg Reflectors (DBR) structural and optical properties has been investigated.
  • Keywords
    Distributed Bragg reflectors; Gallium arsenide; Optical buffering; Optical microscopy; Optical refraction; Optical saturation; Oxidation; Refractive index; Scanning electron microscopy; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
  • Conference_Location
    Smolenice Castle, Slovakia
  • Print_ISBN
    0-7803-8335-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2004.1441188
  • Filename
    1441188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3344651