DocumentCode
3344832
Title
High-frequency electron transport in a model ballistic MOSFET
Author
Horak, M.
fYear
2004
fDate
17-21 Oct. 2004
Firstpage
219
Lastpage
222
Abstract
Simple one-dimensional MOSFET model with de bias and small microwave signal applied to the gate is investigated The high1requency transmission amplitudes are calculated as function of electron energy and the high-frequency current density is found.
Keywords
Electronic mail; Electrons; Frequency; MOSFET circuits; Microelectronics; Microwave transistors; Particle scattering; Steady-state; Voltage; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location
Smolenice Castle, Slovakia
Print_ISBN
0-7803-8335-7
Type
conf
DOI
10.1109/ASDAM.2004.1441200
Filename
1441200
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