• DocumentCode
    3347194
  • Title

    Carrier-carrier contribution to intersubband scattering in wide quantum wells

  • Author

    Hartig, M. ; Selbmann, P. ; Ganiere, J.D. ; Deveaud, B. ; Rota, L.

  • Author_Institution
    Dept. of Phys., Swiss Federal Inst. of Technol., Lausanne, Switzerland
  • fYear
    1992
  • fDate
    23-28 May 1992
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    Summary form only given. The importance of LO phonon emission for intersubband scattering (ISBS) processes is now well established. In very good agreement with theoretical expectations, such a process gives scattering times of 1 ps or less. The situation is different in wide quantum wells, when the energy separation /spl Delta/E/sub 12/ between the first two subbands is smaller than /spl planck//spl omega//sub LO/. It has often been proposed that ISBS should then be mediated mainly by acoustical phonons, and be quite slow. Such wells would then be promising for laser applications. However, the demonstration of such a laser failed to be obtained. An explanation was in fact proposed in 1989 by Goodnick and Lugli who computed carrier-carrier induced intersubband scattering. It is clear from their calculations that such ISBS could be as short as a few ps, 100 times faster than acoustic phonons. A number of results have nevertheless been published since then, with scattering times ranging from 1 ps to 1 ns. We have carefully studied ISBS by using femtosecond time-resolved luminescence with resonant excitation. The advantage of luminescence in addition to the very good time resolution is the ability to probe the whole distribution of electrons. This of course needs some assumptions on the behavior of holes, but we can show that their contribution to the observed dynamics is minimal.
  • Keywords
    electron-phonon interactions; high-speed optical techniques; interface phonons; photoluminescence; quantum well lasers; semiconductor quantum wells; time resolved spectra; acoustic phonons; acoustical phonons; carrier-carrier contribution; carrier-carrier induced intersubband scattering; dynamics; electron distribution; electrons; energy separation; femtosecond time-resolved luminescence; holes; intersubband scattering; intersubband scattering processes; phonon emission; resonant excitation; scattering times; time resolution; wide quantum wells; Acceleration; Acoustic scattering; Charge carrier density; Charge carrier processes; Energy loss; Gaussian distribution; Optical pumping; Optical scattering; Particle scattering; Plasmons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-576-X
  • Type

    conf

  • DOI
    10.1109/QELS.1999.807345
  • Filename
    807345