• DocumentCode
    3348306
  • Title

    Enhanced energy range thermoelectrically cooled silicon X-ray detectors

  • Author

    Redus, R. ; Huber, A. ; Pantazis, J. ; Pantazis, T.

  • Author_Institution
    Amptek, Inc., Bedford, MA, USA
  • fYear
    2011
  • fDate
    23-29 Oct. 2011
  • Firstpage
    580
  • Lastpage
    585
  • Abstract
    Thermoelectrically cooled X-ray detectors are widely used in both portable and laboratory X-ray spectrometers. The most common detectors are fully depleted 500 μm devices behind a Be window to provide a vacuum tight enclosure. These provide good resolution and efficiency for characteristic X-rays from 2 keV to about 20 keV but a larger energy range is desirable. In many applications, one needs to measure elements with K lines below 2 keV and above 20 keV with good efficiency. Recent research at Amptek, Inc. has focused on enhancing both the upper and lower ends of this energy range. First, to improve efficiency at high energies, SDDs have been fabricated on 1 mm wafers. Second, to improve efficiency at low energies, windows made of 50 nm Si3N4 on a Si grid have been developed. Third, to improve resolution at low energies, electronic noise has been reduced by using a modified trapezoidal pulse shape with lower 1/f noise index. The performance of systems utilizing these enhancements will be presented.
  • Keywords
    X-ray detection; semiconductor device noise; silicon radiation detectors; thermoelectric devices; Be window; K lines; SDD; Si3N4; electron volt energy 2 keV to 20 keV; electronic noise; energy range enhancement; laboratory X-ray spectrometers; modified trapezoidal pulse shape; noise index; silicon drift detectors; thermoelectrically cooled silicon X-ray detectors; vacuum tight enclosure; wavelength 500 mum; Anodes; Artificial intelligence; Detectors; Indexes; Instruments; Noise; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
  • Conference_Location
    Valencia
  • ISSN
    1082-3654
  • Print_ISBN
    978-1-4673-0118-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2011.6154116
  • Filename
    6154116