Transient grating measurement of in-plane ambipolar diffusion in a 4-micron-band-gap, four-layer superlattlce

Author

Anson, S.A. ; Olesberg, Jonathon T. ; Flatte, M.E. ; Hasenberg, T.C. ; Boggess, T.F.

Author_Institution

Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA, USA

fYear

1992

fDate

23-28 May 1992

Firstpage

206

Lastpage

207

Abstract

Summary form only given. We describe time-resolved transient grating measurements of in-plane ambipolar transport in a narrowband-gap superlattice that has a period comprised of four layers: InAs/GaInSb/InAs/AlGaInAsSb. The structure was designed as an active region for mid-infrared semiconductor lasers. Two 140-fs, 840-nm pulses from a mode-locked Ti:sapphire laser were interfered in the superlattice to create the transient grating, which was subsequently interrogated in a time-resolved manner by diffraction of a weak, mid-infrared, 160-fs probe pulse. The diffraction efficiency was measured at 300 K as a function of time-delay, grating period, and carrier density.

Keywords

III-V semiconductors; aluminium compounds; carrier density; carrier lifetime; diffraction gratings; electron-hole recombination; gallium compounds; indium compounds; semiconductor superlattices; time resolved spectra; 300 K; 840 nm; InAs-GaInSb-InAs-AlGaInAsSb; active region; four-layer superlattice; in-plane ambipolar diffusion; in-plane carrier leakage; interface roughness; mid-infrared semiconductor lasers; narrowband-gap superlattice; time-resolved transient grating measurement; Charge carrier density; Density measurement; Diffraction gratings; Gain measurement; Laser mode locking; Optical design; Optical pulses; Probes; Semiconductor lasers; Semiconductor superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807543

Filename

807543