Excitation of intersubband transitions by THz pulses

Author

Kersting, R. ; Bratschitsch, R. ; Thaller, E. ; Strasser, G. ; Unterrainer, K. ; Heyman, J.N.

Author_Institution

Inst. for Solid State Electron., Tech. Univ. Wien, Austria

fYear

1992

fDate

23-28 May 1992

Firstpage

219

Lastpage

220

Abstract

Summary form only given. When intersubband transitions are excited in semiconductor heterostructures, the charge carriers follow the driving field in an oscillatory motion. THz time-domain spectroscopy is an attractive tool to study the polarization following an exciting THz pulse. A time resolution which is shorter than the oscillation time of the driving field enables the observation of the coherent electron motion for the first time. The investigated structures are GaAs/AlGaAs modulation doped parabolic quantum wells.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; semiconductor heterojunctions; semiconductor quantum wells; time resolved spectra; GaAs-AlGaAs; THz pulses; charge carriers; coherent electron motion; driving field; intersubband transitions excitation; modulation doped parabolic quantum wells; oscillatory motion; polarization; semiconductor heterostructures; time resolution; time-domain spectroscopy; Electrons; Epitaxial layers; Frequency; Gallium arsenide; Gratings; Laser excitation; Optical pulse generation; Polarization; Pulse measurements; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807565

Filename

807565