Spatial structure of broad-area vertical-cavity surface-emitting lasers

Author

Ackemann, T. ; Tredicce, J.R. ; Jager, R. ; Ebeling, K.J.

Author_Institution

Inst. Non Lineaire de Nice, CNRS, Valbonne, France

fYear

1992

fDate

23-28 May 1992

Firstpage

228

Abstract

Summary form only given. The spatial structure of the emission of broad-area vertical-cavity surface-emitting lasers (VCSELs) attracted considerable interest during the last years from both an application and a fundamental viewpoint. Their cavity design corresponds rather closely to the assumptions of the single longitudinal mode, uniform field model of a high finesse plano-planar resonator. We investigate InGaAs-GaAs MQW lasers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; surface emitting lasers; InGaAs-GaAs; InGaAs-GaAs MQW lasers; VCSEL; broad-area vertical-cavity surface-emitting lasers; cavity design; high finesse plano-planar resonator; single longitudinal mode; spatial structure; uniform field model; Laser modes; Laser theory; Optical design; Optical polarization; Optical resonators; Optical surface waves; Quantum well lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807585

Filename

807585