• DocumentCode
    3351365
  • Title

    Suppression of spontaneous emission for two-dimensional GaAs photonic crystal microcavities

  • Author

    Sondergaard, T. ; Broeng, Jes ; Bjarklev, A.

  • Author_Institution
    Dept. of Electromagn. Syst., Tech. Univ., Lyngby, Denmark
  • fYear
    1992
  • fDate
    23-28 May 1992
  • Firstpage
    252
  • Lastpage
    253
  • Abstract
    Summary form only given. Spontaneous emission represents a loss mechanism that fundamentally limits the performance of semiconductor lasers. The rate of spontaneous emission may, however, be controlled by a new class of periodic dielectric structures known as photonic crystals. Although a three-dimensional periodic structure may rigorously forbid spontaneous emission within a frequency interval, a simpler-to-fabricate two-dimensional (2-D) periodic structure may also introduce a large suppression of spontaneous emission.
  • Keywords
    III-V semiconductors; gallium arsenide; micro-optics; micromechanical resonators; photonic band gap; spontaneous emission; GaAs; GaAs 2D photonic crystal microcavities; large spontaneous emission suppression; loss mechanism; periodic dielectric structures; semiconductor lasers; spontaneous emission suppression; two-dimensional GaAs photonic crystal microcavities; Dielectrics; Frequency; Gallium arsenide; Optical control; Optical losses; Performance loss; Periodic structures; Photonic crystals; Semiconductor lasers; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-576-X
  • Type

    conf

  • DOI
    10.1109/QELS.1999.807632
  • Filename
    807632