• DocumentCode
    3352133
  • Title

    Dielectric properties of various Ba(ZrxTi1-x)O3 ceramics under DC bias

  • Author

    Wada, S. ; Adachi, H. ; Chazono, H. ; Kishi, H. ; Tsurumi, T.

  • Author_Institution
    Dept. of Metall. & Ceramics Sci., Tokyo Inst. of Technol., Japan
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    503
  • Abstract
    Ba(ZrTi1-x)O3 (BZxT1-x) ceramics with high Zr contents are electrostrictive materials with low M electrostriction constants. However, a multilayer ceramic capacitor (MLCC) with BZ0.21T 0.79 composition exhibited a large strain of 0.6 μm at 0.1 kV/cm. Its apparent piezoelectric constant estimated, on the assumption that this MLCC is piezoelectrics, was 29,000 pm/V. This revealed that even if a piezoelectric constant of one layer is small, its multilayer ceramics can have ultrahigh piezoelectric constant. However, its strain vs. electric field behavior was not explained using an electrostrictive effect. Thus, dielectric properties of BZ0.21T0.79 ceramics under DC bias were investigated. As a result, the dielectric constants significantly decreased with increasing DC bias at room temperature. Thus, using a model considering DC bias dependence of dielectric constants, strain vs. electric field behavior of MLCC was explained. Temperature dependence of dielectric constants was also measured under DC bias. The dielectric peak shifted to higher temperature with increasing DC bias. The similar study was also done about BZxT1-x ceramics with other composition
  • Keywords
    barium compounds; ceramic capacitors; electrostriction; permittivity; piezoceramics; Ba(ZrxTi1-x)O3 ceramic; Ba(ZrTi)O3; DC bias; dielectric constant; dielectric properties; electrostriction constant; multilayer ceramic capacitor; piezoelectric constant; temperature dependence; Capacitive sensors; Capacitors; Ceramics; Dielectric constant; Dielectric materials; Dielectric measurements; Electrostriction; Nonhomogeneous media; Temperature dependence; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-5940-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2000.941607
  • Filename
    941607