DocumentCode
3352133
Title
Dielectric properties of various Ba(ZrxTi1-x)O3 ceramics under DC bias
Author
Wada, S. ; Adachi, H. ; Chazono, H. ; Kishi, H. ; Tsurumi, T.
Author_Institution
Dept. of Metall. & Ceramics Sci., Tokyo Inst. of Technol., Japan
Volume
1
fYear
2000
fDate
2000
Firstpage
503
Abstract
Ba(ZrTi1-x)O3 (BZxT1-x) ceramics with high Zr contents are electrostrictive materials with low M electrostriction constants. However, a multilayer ceramic capacitor (MLCC) with BZ0.21T 0.79 composition exhibited a large strain of 0.6 μm at 0.1 kV/cm. Its apparent piezoelectric constant estimated, on the assumption that this MLCC is piezoelectrics, was 29,000 pm/V. This revealed that even if a piezoelectric constant of one layer is small, its multilayer ceramics can have ultrahigh piezoelectric constant. However, its strain vs. electric field behavior was not explained using an electrostrictive effect. Thus, dielectric properties of BZ0.21T0.79 ceramics under DC bias were investigated. As a result, the dielectric constants significantly decreased with increasing DC bias at room temperature. Thus, using a model considering DC bias dependence of dielectric constants, strain vs. electric field behavior of MLCC was explained. Temperature dependence of dielectric constants was also measured under DC bias. The dielectric peak shifted to higher temperature with increasing DC bias. The similar study was also done about BZxT1-x ceramics with other composition
Keywords
barium compounds; ceramic capacitors; electrostriction; permittivity; piezoceramics; Ba(ZrxTi1-x)O3 ceramic; Ba(ZrTi)O3; DC bias; dielectric constant; dielectric properties; electrostriction constant; multilayer ceramic capacitor; piezoelectric constant; temperature dependence; Capacitive sensors; Capacitors; Ceramics; Dielectric constant; Dielectric materials; Dielectric measurements; Electrostriction; Nonhomogeneous media; Temperature dependence; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.941607
Filename
941607
Link To Document