Possibility of temperature regime expansion in near-an mid MQ lasers

Author

Mashoshyna, O.V. ; Joullie, A.

Author_Institution

Kharkov Nat. Univ. of Radio Electron., Kharkov

fYear

2007

fDate

20-22 June 2007

Firstpage

54

Lastpage

56

Abstract

It is observed the existing methods of temperature regime expansion in MQW lasers of near-and mid-IR semiconductor heterostructures. Also it is shown new possibilities to extend working temperatures of the considered devices.

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; thermal expansion; Auger recombination; InGaAsSb; asymmetric heterostructure lasers; mid-IR MQW lasers; near-IR MQW lasers; quantum well; semiconductor heterostructures; semiconductor laser; temperature regime expansion; Fiber lasers; Laser stability; Optical fibers; Power lasers; Radiative recombination; Semiconductor lasers; Surface emitting lasers; Temperature distribution; Temperature sensors; Threshold current; Auger recombination; InGaAsSb; asymmetric heterostructure; mid-infrared; near-infrared; quantum well; semiconductor laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic Physics and Technology, 2007. OPT '07. International Workshop on

Conference_Location

Kharkov

Print_ISBN

1-4244-1322-2

Electronic_ISBN

1-4244-1322-2

Type

conf

DOI

10.1109/OPT.2007.4298536

Filename

4298536