A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides

Author

Degraeve, R. ; De Blauwe, J. ; Ogier, J.L. ; Roussel, Ph. ; Greoseneken, G. ; Maes, H.E.

Author_Institution

IMEC, Leuven, Belgium

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

327

Lastpage

330

Abstract

In this paper, the impact of oxide nitridation on high field FN-degradation is studied. Nitridation causes a significant decrease of the oxide trap generation and also introduces an additional polarity dependence of the degradation, which can be modelled by taking into account the asymmetry of the nitrogen profile in the oxide. The nitridation effects on trap generation are correlated with changes in the Weibull slope of the Q/sub BD/-distribution.

Keywords

VLSI; Weibull distribution; dielectric thin films; electron traps; integrated circuit modelling; integrated circuit reliability; nitridation; statistical analysis; FN-degradation; Q/sub BD/-distribution; VLSI; Weibull slope; asymmetry; high-field degradation; nitrided oxides; oxide nitridation; oxide trap generation; polarity dependence; reduced trap generation; Annealing; Degradation; Density measurement; Dielectrics; Electric breakdown; Electron traps; Filling; Nitrogen; Performance evaluation; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553595

Filename

553595