SI-thyristor as a high power switching device for fast high voltage pulse generators

Characterization of SI-thyristors as a fast closing switch for pulsed power application was examined. Since the SI-thyristors employed in this study are normally on-state, a negative bias voltage is necessary at the gate electrode to establish hold-off-state. As a consequence, fast current rise rate can be strongly expected. A low impedance gate driving circuit built with MOSFETs improved turn-on characteristics. By adjusting anode voltage distribution and gate timing, carefully stacked SI-thyristors were successfully operated to make turn on. The highest di/dt obtained in this study is 55 kA//spl mu/s. A fast high voltage pulse generator with magnetic pulse compression scheme was built by using stacked SI-thyristors. To obtain a faster high voltage pulse a nonlinear transmission line as an additional circuit for pulse sharpening was employed.