Application of MRF scheme for low-loss transmission lines on CMOS-grade silicon

Author

Lee, Sang-No ; Park, Sung-Jun ; Lee, Joon-Ik ; Yook, Jong-Gwan ; Kim, Yong-Jun ; Lee, Sang-Jo

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

2005

fDate

31 May-3 June 2005

Firstpage

1514

Abstract

This paper presents a surface finishing method based on magnetorheological (MR) fluid to obtain low-loss coplanar waveguides on CMOS-grade silicon. CPWs with different lateral dimension but having identical 50 Ω characteristic impedance are evaluated. In addition, finite ground effects on CPW performances before and after magnetorheological finishing (MRF) treatment are investigated. In all cases, CPWs treated with the MR fluid-based finishing method reveal much lower attenuation constants compared to original ones owing to reduced conductor roughness. The proposed MRF scheme can be applied to smoothen three dimensional high frequency structures and dramatically improve conductor roughness.

Keywords

CMOS integrated circuits; conductors (electric); coplanar waveguides; elemental semiconductors; magnetorheology; silicon; surface finishing; surface roughness; transmission lines; 3D high frequency structures; 50 ohm; CMOS-grade silicon; MR fluid; MRF scheme; MRF treatment; conductor roughness; coplanar waveguides; magnetorheological finishing; magnetorheological fluid; surface finishing method; transmission line; Attenuation; Conductors; Coplanar transmission lines; Coplanar waveguides; Silicon; Surface finishing; Surface impedance; Surface treatment; Surface waves; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 2005. Proceedings. 55th

ISSN

0569-5503

Print_ISBN

0-7803-8907-7

Type

conf

DOI

10.1109/ECTC.2005.1441988

Filename

1441988