A novel TiN/Ti contact plug technology for gigabit scale DRAM using Ti-PECVD and TiN-LPCVD

Author

Ohto, K. ; Urabe, K. ; Taguwa, T. ; Chikaki, S. ; Kikkawa, T.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

361

Lastpage

364

Abstract

A new TiN/Ti contact plug technology for gigabit scale DRAM was developed by using Ti plasma-enhanced chemical vapor deposition (PECVD) and TiN low-pressure chemical vapor deposition (LPCVD). By using this technology, low contact resistances of 219 /spl Omega/ (n/sup +/-Si) and 332 /spl Omega/ (p/sup +/-Si) were achieved without increasing leakage currents for 0.25 /spl mu/m /spl phi/ contact holes with aspect ratio of 6.

Keywords

DRAM chips; chemical vapour deposition; cluster tools; contact resistance; integrated circuit interconnections; leakage currents; plasma CVD; titanium; titanium compounds; 0.25 mum; 219 ohm; 332 ohm; Arrhenius plot; Ti-PECVD; TiN-LPCVD; TiN-Ti; TiN/Ti contact plug technology; aspect ratio; cluster tool; contact holes; gigabit scale DRAM; leakage currents; low contact resistances; low-pressure chemical vapor deposition; n/sup +/-Si; p/sup +/-Si; plasma-enhanced chemical vapor deposition; Annealing; Contacts; Electrical resistance measurement; Plasma temperature; Plugs; Radio frequency; Random access memory; Semiconductor device measurement; Semiconductor films; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553603

Filename

553603