Mapping Of Deep Level Concentration In Semi-insulating GaAs Wafers With A Laser Diode (λ=1.3 μm)

Author

Pan, Ci-Ling ; Chang, C.-S. ; Wu, Hsiao-Hua ; Hsieh, Tzung-Rue

Author_Institution

National Chiao Tung University

fYear

1990

fDate

4-9 Nov 1990

Firstpage

598

Lastpage

599

Keywords

Absorption; Annealing; Diode lasers; Etching; Gallium arsenide; Plasma applications;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE

Print_ISBN

0-87942-550-4

Type

DOI

10.1109/LEOS.1990.690692

Filename

690692

Link To Document