Development of radiation sensor based on Pt/ZnO Schottky diode

Author

Narita, S. ; Nishibori, Y. ; Naito, H. ; Ito, H. ; Endo, H. ; Chiba, T. ; Sakemi, Y. ; Itoh, M. ; Yoshida, H.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Iwate Univ., Morioka, Japan

fYear

2011

fDate

23-29 Oct. 2011

Firstpage

1726

Lastpage

1729

Abstract

We have fabricated the Pt/ZnO Schottky diode based on the single crystal substrate grown by the hydrothermal growth method. The output signals from the diode were analyzed for the incidence of x-rays and α-rays, and the clear responses for those radiations were observed. We have demonstrated a potential of the ZnO based device for ionizing radiations. In addition, we investigated the radiation hardness of the ZnO material irradiating the diode sample with the high energy proton beam. The electrical characteristics have not been significantly changed even after irradiation of 10¹⁵ protons/cm².

Keywords

Schottky diodes; crystal growth from solution; proton beams; radiation detection; radiation hardening; semiconductor counters; Pt; Pt/ZnO Schottky diode; X-ray incidence; ZnO; ZnO material; alpha-ray incidence; diode sample; electrical characteristics; high energy proton beam; hydrothermal growth method; ionizing radiations; output signals; radiation hardness; radiation sensor; single crystal substrate; CAMAC; Current measurement; Light emitting diodes; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE

Conference_Location

Valencia

ISSN

1082-3654

Print_ISBN

978-1-4673-0118-3

Type

conf

DOI

10.1109/NSSMIC.2011.6154669

Filename

6154669