DocumentCode
3361897
Title
Ultra-fine grain reconfigurability using CNTFETs
Author
Connor, I.O. ; Liu, J. ; Navarro, D. ; Hassoune, I. ; Burignat, S. ; Gaffiot, F.
Author_Institution
Univ. of Lyon, Ecully
fYear
2007
fDate
11-14 Dec. 2007
Firstpage
194
Lastpage
197
Abstract
This paper describes a family of novel dynamically reconfigurable logic gates with double-gate carbon nanotube field-effect transistors (DG-CNTFET). The design is based on a property specific to this device: ambivalence, enabling p-type or n-type behavior depending on the back-gate voltage. Through simulations using available models, these gates and a 10-function ALU offering fine-grain reconfigurability are shown to operate at 20GHz.
Keywords
carbon nanotubes; field effect transistors; logic design; logic gates; ALU; back-gate voltage; double-gate carbon nanotube field-effect transistors; dynamically reconfigurable logic gates; frequency 20 GHz; n-type behavior; p-type behavior; ultra-fine grain reconfigurability; CMOS logic circuits; Computer architecture; Computer networks; Integrated circuit interconnections; Logic devices; Logic gates; Nanoscale devices; Reconfigurable logic; Silicon; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2007. ICECS 2007. 14th IEEE International Conference on
Conference_Location
Marrakech
Print_ISBN
978-1-4244-1377-5
Electronic_ISBN
978-1-4244-1378-2
Type
conf
DOI
10.1109/ICECS.2007.4510963
Filename
4510963
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