Advanced design of high linearity, low noise amplifier for WLAN using a SiGe BiCMOS technology

Author

Sadowy, J. ; Graffeuil, J. ; Tournier, E. ; Escotte, L. ; Plana, R.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

fYear

2001

fDate

14-14 Sept. 2001

Firstpage

6

Lastpage

11

Abstract

In this paper, we present the design of an integrated low noise amplifier (LNA) for WLAN applications in the 6 GHz range using a SiGe BiCMOS technology. The SiGe HBTs feature a cut-off frequency f/sub t/ higher than 40 GHz and maximum oscillation frequency f/sub max/ higher than 50 GHz. The design of some of the passive devices of the circuit has been achieved from 2D electromagnetic simulations. We have observed quite good agreement between measurements and simulation, even in the nonlinear regime. The LNA exhibits a power gain larger than 15 dB from 5 GHz to 6 GHz and 2 GHz bandwidth, and a noise figure lower than 2 dB. It exhibits a 1 dB input referred compression point of more than -18 dBm and a 0 dBm input referred third order intercept point.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; circuit simulation; integrated circuit design; integrated circuit measurement; integrated circuit noise; semiconductor materials; wireless LAN; 15 dB; 2 GHz; 2 dB; 2D electromagnetic simulations; 40 GHz; 5 to 6 GHz; 50 GHz; IC measurements; LNA; LNA design; SiGe; SiGe BiCMOS technology; SiGe HBTs; WLAN; WLAN applications; bandwidth; cut-off frequency; high linearity low noise amplifier; input referred compression point; input referred third order intercept point; integrated low noise amplifier; maximum oscillation frequency; noise figure; nonlinear regime; passive device design; power gain; simulation; BiCMOS integrated circuits; Circuit simulation; Cutoff frequency; Electromagnetic devices; Germanium silicon alloys; Integrated circuit technology; Linearity; Low-noise amplifiers; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2001. Digest of Papers. 2001 Topical Meeting on

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-7129-1

Type

conf

DOI

10.1109/SMIC.2001.942332

Filename

942332