A radio-frequency CMOS active inductor and its application in designing high-Q filters

Author

Xiao, Haiqiao ; Schaumann, Rolf ; Daasch, W. Robert ; Wong, Phillip K. ; Pejcinovic, Branimir

Author_Institution

Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA

Volume

4

fYear

2004

fDate

23-26 May 2004

Abstract

An all-transistor CMOS active inductor with a self-resonance frequency f_R=5.7 GHz is presented. Large f_R is achieved by forming an all-NMOS signal path. The measured quality factor, Q, is as high as 665, but Q can be infinite theoretically. Both f_R and Q are tunable via biasing and on-chip varactors. As an example for using the active inductor, a high-Q bandpass filter for radio-frequency applications is designed. The inductor circuit was implemented in TSMC 0.18-μm standard digital CMOS technology and occupies an area of 26.6 μm×30 μm including double guardrings. For a supply voltage of 1.8 V, the circuit consumes 4.4 mW, and IIP3 is measured at V_pp=270 mV.

Keywords

CMOS digital integrated circuits; Q-factor; band-pass filters; inductors; radiofrequency filters; radiofrequency integrated circuits; 0.18 micron; 1.8 V; 270 mV; 4.4 mW; 5.7 GHz; NMOS signal path; TSMC; all-transistor CMOS active inductor; digital CMOS technology; high-Q bandpass filter; on-chip varactors; quality factor; radiofrequency CMOS active inductor; self resonance frequency; Active inductors; Band pass filters; CMOS digital integrated circuits; CMOS technology; Q factor; Q measurement; Radio frequency; Tunable circuits and devices; Varactors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1328974

Filename

1328974