Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers

Author

Ramungul, N. ; Chow, T.P.

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1998

fDate

3-6 Jun 1998

Firstpage

123

Lastpage

126

Abstract

This paper presents an experimental demonstration of a current-controlled negative resistance (CCNR) in the forward characteristics of 6H-SiC P-i-N rectifiers. These forward characteristics indicate that the poor electrical performance of SiC diodes arises because conductivity modulation is not yet established. The cause of this behaviour appears to be high defect densities and low minority carrier lifetime in the lightly doped drift region. N⁺P junctions exhibit excellent forward characteristics with forward drop of 2.8 V at 100 A/cm² and 3.9 V at 1000 A/cm² without entering the CCNR mode when traps have been filled prior to the measurement

Keywords

carrier lifetime; doping profiles; electrical conductivity; electron traps; electron-hole recombination; hole traps; minority carriers; negative resistance; p-i-n diodes; power semiconductor diodes; semiconductor device testing; semiconductor materials; silicon compounds; solid-state rectifiers; 2.8 V; 3.9 V; 6H-SiC P-i-N rectifiers; CCNR; CCNR mode; N⁺P junctions; SiC; SiC P-i-N rectifiers; SiC diodes; conductivity modulation; current-controlled negative resistance; defect density; electrical performance; forward characteristics; forward drop; lightly doped drift region; minority carrier lifetime; trap filling; Anodes; Cathodes; Charge carrier lifetime; Current density; Diodes; PIN photodiodes; Rectifiers; Silicon carbide; Substrates; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702651

Filename

702651