Numerical simulation of avalanche breakdown in PIN diodes and bipolar transistors

Author

O´Connell, R.M. ; Shiue, T. ; Hoft, R.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Missouri Univ., Columbia, MO, USA

fYear

1992

fDate

4-9 Oct 1992

Firstpage

1061

Abstract

Numerical simulation of avalanche breakdown in bipolar power semiconductors by modeling impact ionization directly in the basic semiconductor equations is described. Use of the sequential Gummel solution algorithm permits more frequent updating of the impact ionization term, leading to better convergence than with the simultaneous Newton algorithm. Results are presented for a reverse-biased PIN diode and for the reverse-biased collector-base junction of an open-base npn transistor

Keywords

bipolar transistors; impact ionisation; p-i-n diodes; power electronics; power transistors; avalanche breakdown; bipolar power semiconductors; bipolar transistors; convergence; impact ionization; numerical simulation; open-base npn transistor; reverse-biased PIN diode; reverse-biased collector-base junction; semiconductor equations; sequential Gummel solution algorithm; Avalanche breakdown; Bipolar transistors; Charge carrier processes; Difference equations; Impact ionization; Integral equations; Numerical simulation; Poisson equations; Power semiconductor devices; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1992., Conference Record of the 1992 IEEE

Conference_Location

Houston, TX

Print_ISBN

0-7803-0635-X

Type

conf

DOI

10.1109/IAS.1992.244430

Filename

244430