DocumentCode
3364236
Title
Effect of growth pressure on the properties and composition fluctuation of in in the blue LED
Author
Jang, D.H. ; Park, C.G.
Author_Institution
Department of Materials Engineering, POSTECH, Pohang 790-784, Korea
fYear
2011
fDate
18-21 Oct. 2011
Firstpage
370
Lastpage
371
Abstract
In this study, the effect of growth pressure on properties of the InGaN / GaN multi quantum wells (MQWs), grown by metal organic chemical vapor deposition (MOCVD) has been investigated. The InGaN/GaN MQWs were grown by changing the growth pressure with fixed all other growth conditions. Photoluminescence (PL) results showed that optical property of InGaN/GaN MQWs is strongly affected by growth pressure. Scanning transmission electron microscope (STEM) - high angle annular dark field (HAADF) was employed to investigate defects affecting on optical property and reveal thickness variation of MQWs with different growth pressures. Also 3D - atom probe (3DAP) was applied to investigate In composition and distribution in InGaN layer under different growth pressure conditions.
Keywords
Atom optics; Atomic layer deposition; Atomic measurements; Gallium nitride; Inductors; Light emitting diodes; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location
Jeju
Print_ISBN
978-1-4577-2139-7
Type
conf
DOI
10.1109/NMDC.2011.6155379
Filename
6155379
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