Epitaxial growth of an MgO buffer layer and electrode layer on Si for Pb(Zr,Ti)O3 by PLD

Thin films of MgO were grown on Si(100) substrates as a buffer layer for the epitaxial growth of films of Pb(Zr,Ti)O₃. A layer of Ir or Pt was also grown on MgO/Si as a bottom electrode layer by pulsed laser deposition. In situ reflection high-energy electron diffraction and an X-ray pole figure confirmed the epitaxial relationship between the film of MgO and the Si(100) substrate, as well as between the layer of Ir or Pt and MgO. The surface and cross-sectional morphologies of films were evaluated by atomic force microscopy and scanning electron microscopy, respectively. The Ir and Pt electrode layers grown on MgO/Si had smooth surfaces good crystallinity. PZT films were also successfully grown epitaxially on the Ir/MgO/Si and Pt/MgO/Si by metal-organic chemical vapor deposition