Active circulator MMIC in CPW technology using quarter micron InAlAs/InGaAs/InP HFETs

Author

Berg, M. ; Hackbarth, T. ; Maile, B.E. ; Kosslowski, S. ; Dickmann, J. ; Köther, D. ; Hopf, B. ; Hartnagel, H.L.

Author_Institution

Daimler-Benz AG, Ulm, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

68

Lastpage

71

Abstract

An active coplanar circulator for Q-band operation based on lattice matched InAlAs/InGaAs/InP HFETs has been designed and fabricated. The active devices have a gate-width of W_G=6×20 μm and T-gates with a gate-length of L_G=0.25 μm. The circuit is fully passivated, contains all matching and biasing networks on chip and operates under zero volt gate bias. Over the entire frequency range the input reflection of the circulator is better than -15 dB and the isolation between the transmit and the receive path is better than -30 dB which is attributed to the extremely low feedback capacitance of the InP-based HFETs

Keywords

III-V semiconductors; S-parameters; aluminium compounds; coplanar waveguides; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave circulators; 0.25 micron; CPW technology; III-V semiconductors; InAlAs-InGaAs-InP; active circulator MMIC; biasing networks; feedback capacitance; fully passivated circuit; input reflection; isolation; lattice matched HFETs; matching networks; zero volt gate bias; Circuits; Coplanar waveguides; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MMICs; MODFETs; Network-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491936

Filename

491936