Modified cone shapes on patterned sapphire substrates for high performance InGaN LED applications

Author

Ray-Hua Horng ; Hsu-Hung Hsueh ; Sin-Liang Ou ; Chiao-Yang Cheng ; Dong-Sing Wuu

Author_Institution

Inst. of Precision Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

fYear

2013

fDate

6-9 July 2013

Firstpage

73

Lastpage

74

Abstract

In this study, GaN-based light emitting diodes (LEDs) were prepared on the cone-shaped patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. To improve the epilayer quality and device performance of LEDs, the PSSs were further wet etched to form the modified top-tip cone shapes. With increasing the wet etching time to 3 min, the LED grown on the cone-shaped PSS has 53% and 8% enhancement in light output (@ 20 mA) as compared with that on conventional sapphire substrate (CSS) and the cone-shaped PSS without wet etching, respectively.

Keywords

CVD coatings; III-V semiconductors; etching; gallium compounds; indium compounds; light emitting diodes; sapphire; shapes (structures); wide band gap semiconductors; cone-shaped PSS; cone-shaped patterned sapphire substrates; epilayer quality; high performance LED applications; light emitting diodes; metal-organic chemical vapor deposition; modified top-tip cone shapes; time 3 min; wet etching; Cascading style sheets; Gallium nitride; Light emitting diodes; Shape; Substrates; Wet etching; cone shape; light-emitting diode; patterned sapphire substrate; wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Infocomm Technology (ICAIT), 2013 6th International Conference on

Conference_Location

Hsinchu

Print_ISBN

978-1-4799-0464-8

Type

conf

DOI

10.1109/ICAIT.2013.6621500

Filename

6621500