DocumentCode
3367007
Title
Evaluation of the yield impact of epitaxial defects on advanced semiconductor technologies
Author
Williams, Ross ; Chen, Weijie ; Akbulut, M.
Author_Institution
Intel Corp., Rio Rancho, NM
fYear
1999
fDate
1999
Firstpage
107
Lastpage
110
Abstract
The SPITB1 defect inspection system was used to inspect epitaxial wafers for an advanced semiconductor manufacturing process to distinguish particles from epitaxial defects (e.g., stacking faults, epi-spikes, mounds, hillocks, and pits) using real-time defect classification (RTDC). The project results indicate that the enhanced defect sensitivity, better capture rate, and the RTDC capabilities of the SPI inspection system can provide a significant improvement in the current defect inspection capabilities for epitaxial wafers. Historical results, from in-line defect inspections on product wafers, have shown that epitaxial defects can have a significant impact on the product yields of advanced semiconductor technologies
Keywords
crystal defects; elemental semiconductors; inspection; integrated circuit yield; semiconductor epitaxial layers; silicon; stacking faults; SPITB1 defect inspection system; Si; advanced semiconductor technologies; capture rate; defect sensitivity; epi-spikes; epitaxial defects; hillocks; mounds; pits; product wafers; product yields; real-time defect classification; stacking faults; Bipolar transistors; CMOS technology; Crystallization; Electronics industry; Inspection; Real time systems; Semiconductor device manufacture; Silicon; Stacking; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
0-7803-5403-6
Type
conf
DOI
10.1109/ISSM.1999.808749
Filename
808749
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