Low defect and high uniformity solid-source molecular beam epitaxy of InAlAs/InGaAs/InP heterostructures for optical MQW-SPSL devices

Author

Panzlaff, K. ; Feifel, T. ; Storm, H.

Author_Institution

Bosch Telecom GmbH, Backnang, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

83

Lastpage

85

Abstract

The authors present the reproducible growth of a defect density as low as 15/cm² and a uniformity as high as +/-0.2% of InGaAs/InAlAs heterostructures on InP substrates which are suitable for mass production. Results on InP and related heterostructures grown by MBE indicate that it is possible to achieve similar quality for P-containing compounds. Different device structures, containing both InAlAs/InGaAs SPSLs and InP have been grown

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor heterojunctions; semiconductor superlattices; InAlAs-InGaAs-InP; InAlAs/InGaAs SPSLs; InAlAs/InGaAs/InP heterostructures; InP substrates; MBE; P-containing compounds; high uniformity; low defect density; mass production; optical MQW-SPSL devices; reproducible growth; short period superlattices; solid-source molecular beam epitaxy; uniformity; Conducting materials; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical devices; Substrates; Superlattices; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491940

Filename

491940