High-speed semiconductor all-optical conversion device based on field-driven quantum well

Author

Yi-Jen Chiu ; Tsu-Hsiu Wu ; Jui-Pin Wu

Author_Institution

Dept. of Photonics, Nat. Sun Yat-Sen Univ., Kaoshiung, Taiwan

fYear

2013

fDate

6-9 July 2013

Firstpage

147

Lastpage

148

Abstract

In this paper, an InGaAsP/InGaAlAs high-band-offset quantum well for high-speed all-optical wavelength conversion is reviewed. Due to large band offset ratio between electron and heavy hole, InGaAsP/InGaAlAs multiple quantum well can have short carrier sweeping time under electric field from low hole band offset. Large than 33GHz of all-optical frequency response is demonstrated under high bias, confirming such material can be used for high speed all optical network.

Keywords

III-V semiconductors; aluminium compounds; electric fields; frequency response; gallium arsenide; indium compounds; optical wavelength conversion; semiconductor devices; semiconductor quantum wells; InGaAsP-InGaAlAs; all-optical frequency response; electric field; field-driven quantum well; high-band-offset quantum well; high-speed semiconductor all-optical conversion device; optical network; short carrier sweeping time; High-speed optical techniques; Lead; Optical devices; Optical modulation; Quantum well devices; all otpical; high speed; wavelength conversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Infocomm Technology (ICAIT), 2013 6th International Conference on

Conference_Location

Hsinchu

Print_ISBN

978-1-4799-0464-8

Type

conf

DOI

10.1109/ICAIT.2013.6621538

Filename

6621538