High-speed series-connected voltage-balancing pulse driver using InP HEMTs

Author

Umeda, Yohtaro ; Kanda, Atsushi ; Sano, Kimikazu ; Murata, Koichi ; Sugahara, Hirohiko

Author_Institution

NTT Photonics Lab., NTT Corp., Kangawa, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

16

Lastpage

19

Abstract

A series-connected voltage-balancing circuit configuration can output a voltage proportional to the number of series-connected transistors. This paper presents this type of driver employing direct-coupled current switch architecture with a high-driving-capability input buffer and 0.1-μm InP HEMTs. By connecting two HEMTs in series the driver can output 3.6-V_pp voltage swing, which is 1.6-times as high as the voltage that can be output by a single HEMT. The rise and fall times of the driver decrease from 33 to 16 ps and from 37 to 16 ps, respectively, by employing the input buffer. These short rise and fall times enable the driver to output clear 10-Gbit/s eye opening.

Keywords

HEMT integrated circuits; III-V semiconductors; buffer circuits; driver circuits; high electron mobility transistors; high-speed integrated circuits; high-speed optical techniques; indium compounds; 0.1 mum; 10 Gbit/s; 16 ps; 3.6 V; 33 ps; 37 ps; HEMT; InP; direct-coupled current switch architecture; high-speed series-connected voltage-balancing pulse driver; series-connected transistors; Driver circuits; FETs; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Optical pulses; Pulse circuits; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442600

Filename

1442600