Online control of quantum dot laser growth

Author

Pohl, U.W. ; Kaiander, I. ; Pötschke, K. ; Hopfer, F. ; Zettler, J.T. ; Bimberg, D.

Author_Institution

Institut fur Festkorperphysik, Technische Univ. Berlin, Germany

fYear

2004

fDate

31 May-4 June 2004

Firstpage

Lastpage

Abstract

Reflectance anisotropy spectroscopy (RAS) was used to control in-situ the complex MOCVD growth process of both InGaAs/GaAs quantum dots (QDs) and lasers with such QDs in the active region. RAS spectra of complete device runs including the first vertical cavity surface emitting QD laser (QD VCSEL) grown using MOCVD are presented.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser cavity resonators; quantum dot lasers; reflectivity; semiconductor growth; surface emitting lasers; InGaAs-GaAs; MOCVD growth process; QD VCSEL; quantum dot laser growth; reflectance anisotropy spectroscopy; vertical cavity surface emitting QD laser; Anisotropic magnetoresistance; Gallium arsenide; Indium gallium arsenide; MOCVD; Optical control; Quantum dot lasers; Reflectivity; Spectroscopy; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442614

Filename

1442614

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3368653