Time and workload dependent device variability in circuit simulations

Author

Rodopoulos, D. ; Mahato, S.B. ; de Almeida Camargo, V. Valduga ; Kaczer, B. ; Catthoor, F. ; Cosemans, S. ; Groeseneken, G. ; Papanikolaou, A. ; Soudris, D.

fYear

2011

fDate

2-4 May 2011

Firstpage

1

Lastpage

4

Abstract

Simulations of an inverter and a 32-bit SRAM bit slice are performed based on an atomistic approach. The circuits´ devices are populated with individual defects, which have realistic carrier-capture and emission behaviour. The wide distribution of defect time scales, accounts for both fast (Random Telegraph Noise - RTN) and near-permanent (Bias Temperature Instability - BTI) defects. The atomistic property of the model allows the detection of workload dependency in the delay of both circuits.

Keywords

SRAM chips; circuit noise; circuit simulation; invertors; SRAM bit slice; atomistic approach; bias temperature instability; carrier-capture behaviour; circuit simulations; defect time scales; emission behaviour; inverter; random telegraph noise; time dependent device variability; word length 32 bit; workload dependency; workload dependent device variability; Delay; Fluctuations; Integrated circuit modeling; Integrated circuit reliability; Random access memory; Runtime; Bias-temperature instability (BTI); circuit simulations; parametric reliability; random telegraph noise (RTN); static random access memory (SRAM); workload dependency;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2011 IEEE International Conference on

Conference_Location

Kaohsiung

ISSN

Pending

Print_ISBN

978-1-4244-9019-6

Type

conf

DOI

10.1109/ICICDT.2011.5783193

Filename

5783193