Effects of forward bias conditions on electroluminescence efficiency in blue and green InGaN single-quantum-well diodes

Author

Hori, A. ; Yasunaga, D. ; Fujiwara, K.

Author_Institution

Kyushu Inst. of Technol., Kitakyushu, Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

219

Lastpage

220

Abstract

The electroluminescence (EL) spectral intensity of super-bright blue and green InGaN single-quantum-well (SQW) LEDs is investigated over a wide temperature range (T=15-300 K) and as a function of wide injection current level (I=0.01-10 mA) to exploit what causes variations of the carrier capture efficiency. The effect of the forward driving voltage on the EL quenching at temperatures below 100 K on the diodes is studied.

Keywords

III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; 0.01 to 10 mA; 15 to 300 K; EL quenching; InGaN; carrier capture efficiency; electroluminescence efficiency; forward bias conditions; green single-quantum-well LED; injection current; super-bright blue single-quantum-well LED; Electroluminescence; Light emitting diodes; Optical pumping; Photoluminescence; Radiative recombination; Semiconductor device manufacture; Semiconductor diodes; Temperature dependence; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442651

Filename

1442651