Weak avalanche model for SOI and cryogenic analog circuits

Author

Lai, J.C. ; Beaudoin, K.P.

Author_Institution

Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

153

Lastpage

158

Abstract

A weak avalanche cryogenic model based on transverse field and temperature dependence for different scattering mechanisms that influence channel mobility is developed. The kink effect and weak avalanche are shown in both SOI/SOS (body floating) and bulk (carrier freeze-out) at cryogenic temperatures below 30 K. The negative conductance model based on both 2-dimensional electric field and temperature effect in SOI body tie transistors is also developed. Finally, weak avalanche effects for low Vgs conditions is also described and implemented in SPICE

Keywords

CMOS analogue integrated circuits; MOSFET; SIMOX; SPICE; avalanche breakdown; carrier mobility; cryogenic electronics; impact ionisation; integrated circuit modelling; semiconductor device models; 2D electric field; 30 K; SOI body tie transistors; SOI/SOS; SPICE; Si; body floating type; bulk type; carrier freeze-out; channel mobility; cryogenic analog circuits; cryogenic temperatures; kink effect; negative conductance model; scattering mechanisms; temperature dependence; transverse field dependence; weak avalanche cryogenic model; Analog circuits; Cryogenics; Impact ionization; MOSFETs; SPICE; Scattering; Semiconductor device modeling; Silicon on insulator technology; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-2773-X

Type

conf

DOI

10.1109/VTSA.1995.524653

Filename

524653