Progress in development of high power NPT-IGBT module

Author

Miyashita, S. ; Yoshiwatari, S. ; Kobayashi, S. ; Sakurai, K.

Author_Institution

Fuji Electr. Co. Ltd., Nagano, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

285

Lastpage

288

Abstract

This paper introduces the technology for a newly developed 1200 V/600 A 1-in-1 nonpunchthrough IGBT (NPT-IGBT) module. This IGBT has features such as low power dissipation loss, low noise, soft switching and high reliability. These features have been realized by advanced simulation technologies such as device and circuit simulation, and stress analysis for the 3D-structure

Keywords

circuit analysis computing; insulated gate bipolar transistors; losses; power bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor device packaging; semiconductor device reliability; stress analysis; switching; 1200 V; 3D structure stress analysis; 600 A; circuit simulation; device simulation; noise; nonpunchthrough IGBT module; power NPT-IGBT module; power dissipation loss; reliability; simulation technology; soft switching; Analytical models; Circuit noise; Circuit simulation; Insulated gate bipolar transistors; Power dissipation; Power electronics; Production facilities; Space vector pulse width modulation; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702689

Filename

702689