A high voltage intelligent power module (HVIPM) with a high performance gate driver

Author

Ishii, K. ; Matsumoto, H. ; Takeda, M. ; Kawakami, A. ; Yamada, T.

Author_Institution

Div. of Power Device, Mitsubishi Electr. Corp., Fukuoka City, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

289

Lastpage

292

Abstract

A high voltage intelligent power module (HVIPM) rated at 1200 A/3.3 kV has been developed using optimized punch-through IGBT chips, high quality manufacturing processes and high performance gate control technology. The HVIPM can reduce the surge voltage at turn-off switching without considerably increasing the switching loss because it can change gate resistance in the middle of the switching operation. In this paper, simulation of and experimental results for the gate control circuit, as well as features of the HVIPM, are presented

Keywords

bipolar integrated circuits; circuit analysis computing; circuit optimisation; driver circuits; electric resistance; insulated gate bipolar transistors; integrated circuit packaging; losses; modules; power integrated circuits; surges; 1200 A; 3.3 kV; HVIPM; current rating; gate control circuit; gate control technology; gate driver; gate resistance; high voltage intelligent power module; manufacturing process quality; optimized punch-through IGBT chips; surge voltage; switching loss; switching operation; turn-off switching; voltage rating; Atmosphere; Circuits; Insulated gate bipolar transistors; Multichip modules; Protection; Resistors; Soldering; Temperature; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702690

Filename

702690