DocumentCode
3371213
Title
Passivation study for In0.4AlAs/In0.65GaAs HEMTs by UHV RPECVD grown SiNx dielectrics and their impact on I-V kink and low-frequency dispersion phenomena
Author
Kim, Dae-Hyun ; Noh, Hun-Hee ; Choi, Sung-Sun ; Lee, Jae.-Hak. ; Seo, Kwang-Seok
Author_Institution
ISRC, Seoul Nat. Univ., South Korea
fYear
2004
fDate
31 May-4 June 2004
Firstpage
354
Lastpage
357
Abstract
The influence of silicon nitride (SiNx) passivation on the DC and low-frequency transconductance dispersion behaviours of In0.4AIAs/In0.65GaAs HEMTs has been investigated. Although the surface passivation using MBE grown thin InP etch-stop is effective to suppress I-V kink phenomena, it has critical drawbacks of large gate leakage current, low gate turn-on (Von) and breakdown voltage (BVgd) due to low Schottky barrier height (SBH) of InP layer. To resolve this problem, we have developed innovative SiNx passivation process to prevent I-V kink as well as to maintain low gate leakage current by UHV remote-PECVD system. Through the optimized SiNx passivation process, the DC I-V kink and the low-frequency transconductance dispersion could be significantly improved.
Keywords
III-V semiconductors; Schottky barriers; aluminium compounds; dielectric materials; electric admittance; electric breakdown; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; passivation; plasma CVD; silicon compounds; HEMT; I-V kink; In0.4AlAs-In0.65GaAs; MBE; Schottky barrier height; SiNx; UHV RPECVD; breakdown voltage; gate leakage current; low-frequency transconductance dispersion; silicon nitride passivation; Etching; Gallium arsenide; HEMTs; Indium phosphide; Leakage current; MODFETs; Passivation; Schottky barriers; Silicon compounds; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442728
Filename
1442728
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