Power efficiency calculation of class E amplifier with nonlinear shunt capacitance

Author

Suetsugu, Tadashi ; Kazimierczuk, Marian K.

Author_Institution

Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

2714

Lastpage

2717

Abstract

Power efficiency of a class E RF power amplifier versus dc supply voltage V_DD when the shunt capacitance of the class E amplifier is a nonlinear capacitance with the grading coefficient m = 0.5 is obtained. In the calculation of power efficiency, switching loss due to non-zero turning on of the MOSFET, power loss due to forward voltage drop of the MOSFET body diode, and power loss due to MOSFET on-resistance are incorporated. It is found that the highest power efficiency is obtained at a lower dc supply voltage than the designed dc supply voltage, even though the circuit was designed to achieve the nominal operation at the designed dc supply voltage. The calculation was performed with Mathcad programming and the results were verified with Pspice simulations.

Keywords

MOSFET; capacitance; power amplifiers; radiofrequency amplifiers; DC supply voltage; MOSFET body diode; MOSFET on-resistance; Mathcad programming; Pspice simulation; RF power amplifier; class E amplifier; nonlinear shunt capacitance; power efficiency; Capacitance; Diodes; MOSFET circuits; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switching loss; Turning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5537034

Filename

5537034