Minimization effect of reverse recovery using IGBT

Author

Yahaya, N.Z.

Author_Institution

Dept. of Electr. Eng., Univ. Teknol. PETRONAS, Tronoh, Malaysia

Volume

1

fYear

2012

fDate

12-14 June 2012

Firstpage

485

Lastpage

490

Abstract

This work looks at on how reverse recovery affects the DC-DC converter system with respect to switching frequency and gate resistance of the inductive chopper circuit. Single Cuk converter with IGBT power switch (IRGBC40F) and power diode (UT268) is used as the test circuit. It is found that by increasing the switching frequency, higher reverse recovery power dissipation is observed having lower reverse recovery peak current. On the other hand, these two parameters are inversely proportional to the increase in gate resistance. Efficiency and output voltages ripples are then concluded.

Keywords

DC-DC power convertors; choppers (circuits); power semiconductor diodes; power semiconductor switches; DC-DC converter system; IRGBC40F IGBT power switch; UT268 power diode; gate resistance; inductive chopper circuit; reverse recovery minimization effect; reverse recovery peak current; reverse recovery power dissipation; single cuk converter; switching frequency; test circuit; voltage ripples; Insulated gate bipolar transistors; Logic gates; Resistance; Schottky diodes; Switches; Switching frequency; Switching loss; Cuk converter; Insulated Gate Bipolar Transistor (IGBT); PSpice Simulation; Reverse recovery;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent and Advanced Systems (ICIAS), 2012 4th International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4577-1968-4

Type

conf

DOI

10.1109/ICIAS.2012.6306242

Filename

6306242