DocumentCode
3372428
Title
Monitoring gate and interconnect delay variations by using ring oscillators
Author
Chen, Ying-Yen ; Lin, Chen-Tung ; Lee, Jin-Nung ; Wu, Chi-Feng
Author_Institution
R&D Center, Realtek Semicond. Corp., Hsinchu, Taiwan
fYear
2011
fDate
25-28 April 2011
Firstpage
1
Lastpage
4
Abstract
With process variability increasing in advanced processes, it becomes more challenging to diagnose or debug a low-yield problem. For finding out the root causes of a low-yield problem, currently we rely on limited process data provided by foundries or diagnosis tools and physical failure analysis (PFA). Only relying on defect diagnosis analysis and PFA is not sufficient to quickly conclude with a specific process problem. For gathering more information about a process, we propose to embed a process monitor consisting of ring oscillators in a circuit. Our proposed monitor design can monitor both gate and interconnect delay variation. A comprehensive simulation has been conducted and the silicon results will be shown in this paper.
Keywords
delays; elemental semiconductors; failure analysis; integrated circuit interconnections; oscillators; process monitoring; silicon; Si; defect diagnosis analysis; diagnosis tools; interconnect delay variations; low-yield problem; monitoring gate; physical failure analysis; ring oscillators; Delay; Integrated circuit interconnections; Libraries; Metals; Ring oscillators; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on
Conference_Location
Hsinchu
ISSN
Pending
Print_ISBN
978-1-4244-8500-0
Type
conf
DOI
10.1109/VDAT.2011.5783597
Filename
5783597
Link To Document