DocumentCode
3372537
Title
Effects of Environmental Condition on the Strength of Submicron-Thick Single Crystal Silicon Film
Author
Nakao, S. ; Ando, T. ; Shikida, M. ; Sato, K.
Author_Institution
Nagoya Univ., Nagoya
fYear
2007
fDate
10-14 June 2007
Firstpage
375
Lastpage
378
Abstract
We developed a quasi-static tensile test system that controls environmental conditions, such as pressure, temperature, and surrounding gasses. Using this system, we evaluated the fracture properties of micron- and submicron-thick single-crystal-silicon film under several conditions. The strength of silicon measured in vacuum or helium was slightly higher than that in laboratory air. We measured the fracture toughness at different temperatures ranging from room temperature (RT) to 500degC and found a brittle-to-ductile transition at 70degC for micron-sized silicon film. The fracture toughness drastically increased at the transition temperature and saturated at a level of 2.5 MParadicm, which is twice the value at RT. On the other hand, submicron-thick silicon was less brittle: its fracture toughness was already 2.7 MParadicm at RT.
Keywords
environmental factors; fracture toughness testing; semiconductor thin films; silicon; tensile testing; Si; brittle-to-ductile transition; environmental effects; fracture properties; fracture strength; fracture toughness; quasistatic tensile test system; submicron-thick single crystal silicon film; temperature 293 K to 298 K; temperature 500 C; temperature 70 C; Bars; Control systems; Helium; Laboratories; Mechanical factors; Semiconductor films; Silicon; System testing; Temperature; Transistors; environmental effect; fracture strength; single crystal silicon; size effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International
Conference_Location
Lyon
Print_ISBN
1-4244-0842-3
Electronic_ISBN
1-4244-0842-3
Type
conf
DOI
10.1109/SENSOR.2007.4300146
Filename
4300146
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